Similarity of pre-breakdown leakage current fluctuations of p- and n-MOSFETs

In the presented study, p- and n- MOSFETSs with 5nm gate oxide thickness are stressed electrically in inversion mode. Pre-breakdown leakage current fluctuations, as switching and RTS behaviour and bursts, occur quite similarly for both kinds of devices. Positively charged traps within the oxide layer, which can switch from neutral to positive by trapping or de-trapping of an electron into or out of a deep state, are proposed as a cause for pre-breakdown leakage current switching RTS behaviour for both p- and n-MOSFET devices.