Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides

Author

Duong, Lesly ; Li, Erhong ; Gopinath, Venkatesh ; Prasad, Sharad ; Lin, Joyce ; Pachura, David ; Hornback, V.

Author_Institution

Characterization & Reliability, LSI Logic Corp., Milpitas, CA, USA

fYear

2003

fDate

20-23 Oct. 2003

Firstpage

128

Lastpage

130

Abstract

This work reports the effect of nitrogen incorporation on negative bias temperature instability (NBTI) of PMOS devices with 1.4 nm equivalent oxide thickness. It is found that for these ultra-thin oxynitrides, the linear threshold voltage degrades faster with higher content of nitrogen using both constant voltage and constant field methods.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; nitrogen compounds; semiconductor doping; stability; PMOS devices; constant field methods; constant voltage; linear threshold voltage; negative bias temperature instability; nitrogen; ultrathin oxinitrides; CMOS technology; Degradation; Dielectrics; Frequency; MOS devices; Negative bias temperature instability; Niobium compounds; Nitrogen; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2003 IEEE International

Print_ISBN

0-7803-8157-2

Type

conf

DOI

10.1109/IRWS.2003.1283318

Filename

1283318

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2768571