• DocumentCode
    2768597
  • Title

    Impact of junction temperature on microelectronic device reliability and considerations for space applications

  • Author

    White, Mark ; Cooper, Mark ; Chen, Yuan ; Bernstein, Joseph

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2003
  • fDate
    20-23 Oct. 2003
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    The space community and other high reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters for decades to improve device reliability and extend operating life. Semiconductor technology scaling and process improvements, however, compel us to reassess common failure mechanisms and established derating guidelines to provide affirmation that common derating factors remain adequate for current technologies used in high reliability space applications. It is incumbent upon the user to develop an understanding of advanced technology failure mechanisms through modeling, accelerated testing, and failure analysis prior to product insertion in critical applications. This paper provides a summary of an industry survey on junction temperature derating from key microelectronics suppliers, and offers recommendations to users for temperature derating for reliable operation over time. Background information on established derating factors, and recommendations for safe operating junction temperatures for newer technologies are also presented.
  • Keywords
    failure analysis; semiconductor device breakdown; semiconductor device reliability; accelerated testing; circuit modeling; critical stress parameters; derating guidelines; derating junction temperature; failure analysis; failure mechanisms; high reliability space applications; microelectronic device reliability; operating life; semiconductor device reliability; semiconductor technology scaling; Equations; Failure analysis; Laboratories; Life estimation; Microelectronics; Propulsion; Space technology; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2003 IEEE International
  • Conference_Location
    Lake Tahoe, CA, USA
  • Print_ISBN
    0-7803-8157-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2003.1283320
  • Filename
    1283320