DocumentCode
2768597
Title
Impact of junction temperature on microelectronic device reliability and considerations for space applications
Author
White, Mark ; Cooper, Mark ; Chen, Yuan ; Bernstein, Joseph
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2003
fDate
20-23 Oct. 2003
Firstpage
133
Lastpage
136
Abstract
The space community and other high reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters for decades to improve device reliability and extend operating life. Semiconductor technology scaling and process improvements, however, compel us to reassess common failure mechanisms and established derating guidelines to provide affirmation that common derating factors remain adequate for current technologies used in high reliability space applications. It is incumbent upon the user to develop an understanding of advanced technology failure mechanisms through modeling, accelerated testing, and failure analysis prior to product insertion in critical applications. This paper provides a summary of an industry survey on junction temperature derating from key microelectronics suppliers, and offers recommendations to users for temperature derating for reliable operation over time. Background information on established derating factors, and recommendations for safe operating junction temperatures for newer technologies are also presented.
Keywords
failure analysis; semiconductor device breakdown; semiconductor device reliability; accelerated testing; circuit modeling; critical stress parameters; derating guidelines; derating junction temperature; failure analysis; failure mechanisms; high reliability space applications; microelectronic device reliability; operating life; semiconductor device reliability; semiconductor technology scaling; Equations; Failure analysis; Laboratories; Life estimation; Microelectronics; Propulsion; Space technology; Stress; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2003 IEEE International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-8157-2
Type
conf
DOI
10.1109/IRWS.2003.1283320
Filename
1283320
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