DocumentCode
2768761
Title
Theory and application of non-contact methods for in-line reliability determination
Author
D´Amico, John
Author_Institution
Semicond. Diagnostics Inc., Tampa, FL, USA
fYear
2003
fDate
20-23 Oct. 2003
Firstpage
157
Lastpage
168
Abstract
This paper has offered an overview of the present status of state-of-the-art non-contact electrical metrologies offered by Semiconductor Diagnostics Inc. for in-line reliability determination. The fundamental methodologies employed in the techniques to monitor reliability concerns, ranging from heavy metal contamination in silicon to dielectric charges, leakage and capacitance, have been discussed. Lastly, the value of the of the fast-feedback low cost benefits enabled by the non-contact, preparation free approach has been established through a few select application examples.
Keywords
dielectric properties; dielectric thin films; integrated circuit interconnections; integrated circuit reliability; Semiconductor Diagnostics Incorporated; capacitance; dielectric charges; heavy metal contamination; in-line reliability determination; leakage; noncontact electrical metrologies; noncontact methods; reliability monitoring; tutorial; Dielectrics; Iron; Length measurement; Monitoring; Pollution measurement; Reliability theory; Silicon; Spontaneous emission; Surface contamination; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN
0-7803-8157-2
Type
conf
DOI
10.1109/IRWS.2003.1283330
Filename
1283330
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