DocumentCode :
2768761
Title :
Theory and application of non-contact methods for in-line reliability determination
Author :
D´Amico, John
Author_Institution :
Semicond. Diagnostics Inc., Tampa, FL, USA
fYear :
2003
fDate :
20-23 Oct. 2003
Firstpage :
157
Lastpage :
168
Abstract :
This paper has offered an overview of the present status of state-of-the-art non-contact electrical metrologies offered by Semiconductor Diagnostics Inc. for in-line reliability determination. The fundamental methodologies employed in the techniques to monitor reliability concerns, ranging from heavy metal contamination in silicon to dielectric charges, leakage and capacitance, have been discussed. Lastly, the value of the of the fast-feedback low cost benefits enabled by the non-contact, preparation free approach has been established through a few select application examples.
Keywords :
dielectric properties; dielectric thin films; integrated circuit interconnections; integrated circuit reliability; Semiconductor Diagnostics Incorporated; capacitance; dielectric charges; heavy metal contamination; in-line reliability determination; leakage; noncontact electrical metrologies; noncontact methods; reliability monitoring; tutorial; Dielectrics; Iron; Length measurement; Monitoring; Pollution measurement; Reliability theory; Silicon; Spontaneous emission; Surface contamination; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
Type :
conf
DOI :
10.1109/IRWS.2003.1283330
Filename :
1283330
Link To Document :
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