• DocumentCode
    2768761
  • Title

    Theory and application of non-contact methods for in-line reliability determination

  • Author

    D´Amico, John

  • Author_Institution
    Semicond. Diagnostics Inc., Tampa, FL, USA
  • fYear
    2003
  • fDate
    20-23 Oct. 2003
  • Firstpage
    157
  • Lastpage
    168
  • Abstract
    This paper has offered an overview of the present status of state-of-the-art non-contact electrical metrologies offered by Semiconductor Diagnostics Inc. for in-line reliability determination. The fundamental methodologies employed in the techniques to monitor reliability concerns, ranging from heavy metal contamination in silicon to dielectric charges, leakage and capacitance, have been discussed. Lastly, the value of the of the fast-feedback low cost benefits enabled by the non-contact, preparation free approach has been established through a few select application examples.
  • Keywords
    dielectric properties; dielectric thin films; integrated circuit interconnections; integrated circuit reliability; Semiconductor Diagnostics Incorporated; capacitance; dielectric charges; heavy metal contamination; in-line reliability determination; leakage; noncontact electrical metrologies; noncontact methods; reliability monitoring; tutorial; Dielectrics; Iron; Length measurement; Monitoring; Pollution measurement; Reliability theory; Silicon; Spontaneous emission; Surface contamination; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2003 IEEE International
  • Print_ISBN
    0-7803-8157-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2003.1283330
  • Filename
    1283330