• DocumentCode
    2768776
  • Title

    Magnetoresistive random access memory (MRAM) and reliability

  • Author

    Hughes, Brian

  • Author_Institution
    Infineon Technol. Corp., Germany
  • fYear
    2003
  • fDate
    20-23 Oct. 2003
  • Firstpage
    169
  • Lastpage
    174
  • Abstract
    This tutorial provides an overview of the design, operation and materials of magnetoresistive random access memory (MRAM) with emphasis from a reliability engineering perspective. The speaker provided background information on MRAM architectures and discussed novel reliability problems inherent to MRAM. Reliability issues and concerns were discussed and illustrated with examples wherever possible. The intention of the tutorial gave attendees a basic and broad introduction to the reliability challenges raised by this novel memory form.
  • Keywords
    magnetoresistive devices; memory architecture; random-access storage; reliability; MRAM architectures; MRAM reliability; magnetoresistive random access memory; reliability engineering; Antiferromagnetic materials; Coercive force; FETs; Hysteresis; Nonvolatile memory; Random access memory; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2003 IEEE International
  • Print_ISBN
    0-7803-8157-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2003.1283331
  • Filename
    1283331