DocumentCode
2768776
Title
Magnetoresistive random access memory (MRAM) and reliability
Author
Hughes, Brian
Author_Institution
Infineon Technol. Corp., Germany
fYear
2003
fDate
20-23 Oct. 2003
Firstpage
169
Lastpage
174
Abstract
This tutorial provides an overview of the design, operation and materials of magnetoresistive random access memory (MRAM) with emphasis from a reliability engineering perspective. The speaker provided background information on MRAM architectures and discussed novel reliability problems inherent to MRAM. Reliability issues and concerns were discussed and illustrated with examples wherever possible. The intention of the tutorial gave attendees a basic and broad introduction to the reliability challenges raised by this novel memory form.
Keywords
magnetoresistive devices; memory architecture; random-access storage; reliability; MRAM architectures; MRAM reliability; magnetoresistive random access memory; reliability engineering; Antiferromagnetic materials; Coercive force; FETs; Hysteresis; Nonvolatile memory; Random access memory; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN
0-7803-8157-2
Type
conf
DOI
10.1109/IRWS.2003.1283331
Filename
1283331
Link To Document