Silicon carbide lateral overtone bulk acoustic resonator with ultrahigh quality factor

Author

Ziaei-Moayyed, M. ; Habermehl, S.D. ; Branch, D.W. ; Clews, P.J. ; Olsson, R.H., III

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

788

Lastpage

792

Abstract

This work demonstrates a lateral overtone bulk acoustic resonator (LOBAR), which consists of an aluminum nitride (AlN) transducer coupled to a suspended thin silicon carbide (SiC) film fabricated using standard CMOS-compatible processes. The LOBAR design allows for high transduction efficiency and quality factors, by decoupling the transduction and energy storage schemes in the resonator. The frequency and bandwidth of the resonator were lithographically defined and controlled. A LOBAR operating at 2.93GHz with a Q greater than 100,000 in air was fabricated and characterized, having the highest reported f×Q product of any acoustic resonator to date.

Keywords

CMOS integrated circuits; acoustic resonators; aluminium compounds; bulk acoustic wave devices; micromechanical resonators; piezoelectric transducers; silicon compounds; thin films; AlN; LOBAR design; SiC; aluminum nitride transducer; decoupling; energy storage schemes; high transduction efficiency; quality factors; silicon carbide lateral overtone bulk acoustic resonator; standard CMOS-compatible processes; thin silicon carbide film; ultrahigh quality factor; Acoustics; Electrodes; Films; Q factor; Resonant frequency; Silicon carbide; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734543

Filename

5734543