• DocumentCode
    2768963
  • Title

    Temperature compensated single-device electromechanical oscillators

  • Author

    Hajjam, Arash ; Rahafrooz, Amir ; Pourkamali, Siavash

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Denver, Denver, CO, USA
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    801
  • Lastpage
    804
  • Abstract
    This work presents temperature compensated single-device fully micromechanical (circuit-less) oscillators. Thermal-piezoresistive interactions in certain micromechanical resonant structures can lead to self-sustained mechanical vibrations. Self-sustained single crystalline silicon oscillators with frequencies in the few MHz range have been fabricated and their temperature drift behavior is characterized. Temperature drifts as high as - 38ppm/°C measured for the fabricated devices were sharply reduced to less than ±1.5ppm/°C by high concentration phosphorous doping of the structures. TCF as small as 0.4ppm/°C has been demonstrated for a 2.4MHz MEMS oscillator. Furthermore, the TCF of the oscillators has been found to be dependent on the resonator bias current making very close to zero TCF achievable for such devices.
  • Keywords
    doping; elemental semiconductors; micromechanical devices; oscillators; phosphorus; piezoresistive devices; silicon; Si; circuitless oscillators; frequency 2.4 MHz; micromechanical oscillators; micromechanical resonant structures; phosphorus doping; resonator bias current; self-sustained mechanical vibrations; self-sustained single crystalline silicon oscillators; temperature compensated single-device electromechanical oscillators; thermal-piezoresistive interactions; Doping; Micromechanical devices; Oscillators; Piezoresistance; Resonant frequency; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734546
  • Filename
    5734546