DocumentCode
2768963
Title
Temperature compensated single-device electromechanical oscillators
Author
Hajjam, Arash ; Rahafrooz, Amir ; Pourkamali, Siavash
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Denver, Denver, CO, USA
fYear
2011
fDate
23-27 Jan. 2011
Firstpage
801
Lastpage
804
Abstract
This work presents temperature compensated single-device fully micromechanical (circuit-less) oscillators. Thermal-piezoresistive interactions in certain micromechanical resonant structures can lead to self-sustained mechanical vibrations. Self-sustained single crystalline silicon oscillators with frequencies in the few MHz range have been fabricated and their temperature drift behavior is characterized. Temperature drifts as high as - 38ppm/°C measured for the fabricated devices were sharply reduced to less than ±1.5ppm/°C by high concentration phosphorous doping of the structures. TCF as small as 0.4ppm/°C has been demonstrated for a 2.4MHz MEMS oscillator. Furthermore, the TCF of the oscillators has been found to be dependent on the resonator bias current making very close to zero TCF achievable for such devices.
Keywords
doping; elemental semiconductors; micromechanical devices; oscillators; phosphorus; piezoresistive devices; silicon; Si; circuitless oscillators; frequency 2.4 MHz; micromechanical oscillators; micromechanical resonant structures; phosphorus doping; resonator bias current; self-sustained mechanical vibrations; self-sustained single crystalline silicon oscillators; temperature compensated single-device electromechanical oscillators; thermal-piezoresistive interactions; Doping; Micromechanical devices; Oscillators; Piezoresistance; Resonant frequency; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location
Cancun
ISSN
1084-6999
Print_ISBN
978-1-4244-9632-7
Type
conf
DOI
10.1109/MEMSYS.2011.5734546
Filename
5734546
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