DocumentCode :
2769
Title :
A High Speed Low Power CAM With a Parity Bit and Power-Gated ML Sensing
Author :
Anh-Tuan Do ; Shoushun Chen ; Zhi-Hui Kong ; Kiat Seng Yeo
Author_Institution :
IC Design Centre of Excellent, Nanyang Technol. Univ., Singapore, Singapore
Volume :
21
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
151
Lastpage :
156
Abstract :
Content addressable memory (CAM) offers high-speed search function in a single clock cycle. Due to its parallel match-line (ML) comparison, CAM is power-hungry. Thus, robust, high-speed and low-power ML sense amplifiers are highly sought-after in CAM designs. In this paper, we introduce a parity bit that leads to 39% sensing delay reduction at a cost of less than 1% area and power overhead. Furthermore, we propose an effective gated-power technique to reduce the peak and average power consumption and enhance the robustness of the design against process variations. A feedback loop is employed to auto-turn off the power supply to the comparison elements and hence reduce the average power consumption by 64%. The proposed design can work at a supply voltage down to 0.5 V.
Keywords :
amplifiers; circuit feedback; clocks; content-addressable storage; low-power electronics; power consumption; CAM design; clock cycle; content addressable memory; feedback loop; gated-power technique; high speed low power CAM; high-speed ML sense amplifier; high-speed search function; low-power ML sense amplifier; parallel match-line; parity bit; power consumption; power overhead; power supply; power-gated ML sensing; sensing delay reduction; Computer aided manufacturing; Computer architecture; Delay; Microprocessors; Power demand; Sensors; Transistors; CMOS; content addressable memory (CAM); match-line;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2011.2178276
Filename :
6135529
Link To Document :
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