Small-signal analysis of short base transport by transmission line model

Author

Karamarkovic, Jugoslav P. ; Jankovic, Nebojsa D.

Author_Institution

Fac. of Electron. Eng., Nis Univ., Serbia

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

257

Abstract

The small-signal current gain model of short base bipolar transistors has been derived using the transmission line modelling. It has been shown that quasi-ballistic effects occuring in short base minority carrier transport is inherently included in the current gain model. It appears that quasi-ballistic effects in general decrease the static and dynamic current gain. The two approximative asymptotical expressions for static current gain, related to the pure diffusive and pure ballistic transport, has been also derived

Keywords

bipolar transistors; minority carriers; semiconductor device models; transmission line theory; ballistic transport; diffusive transport; dynamic current gain; minority carrier transport; quasi-ballistic transport; short base bipolar transistor; small-signal analysis; static current gain; transmission line model; Ballistic transport; Bipolar transistors; Boundary conditions; Differential equations; Distributed parameter circuits; Frequency; Scattering; Thermal engineering; Transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625237

Filename

625237