DocumentCode
276976
Title
High frequency 800 MHz oscillators
Author
Tsang, K.F. ; Yip, P.C.L ; Morgan, G.B.
Author_Institution
City Polytech. of Hong Kong, Kowloon, Hong Kong
fYear
1992
fDate
33637
Firstpage
42583
Lastpage
42585
Abstract
The design and performance of tuned bipolar transistor power oscillators is presented. An efficiency of 54% was obtained with an output power of 26 dBm at 800 MHz and a noise level of -80 dBc/Hz at 10 kHz offset. The design method is an improved version of Kazimierczuk´s procedure
Keywords
bipolar transistors; microwave oscillators; solid-state microwave circuits; 54 percent; 800 MHz; Kazimierczuk´s procedure; noise level; output power; tuned bipolar transistor power oscillators;
fLanguage
English
Publisher
iet
Conference_Titel
Characterisation of Oscillators esign and Measurement, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
167806
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