• DocumentCode
    2769903
  • Title

    Silicon nanopillar-forest based microfluidic surface-enhanced Raman scattering devices

  • Author

    Mao, H.Y. ; Wu, W.G. ; Zhang, Y.L. ; Lv, P.P. ; Qian, C. ; Xu, J. ; Zhang, H.X.

  • Author_Institution
    Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    968
  • Lastpage
    971
  • Abstract
    We report a novel microfluidic surface-enhanced Raman scattering (SERS) device, which is achieved by bonding a polydimethylsiloxane cap with a microchannel structure onto an SERS-active substrate composed of noble-metal covered silicon nanopillar forests. The silicon nanopillar forests are fabricated by using nanomaterial dots, which are introduced in oxygen-plasma bombardment of photoresist, as etching masks. Analytes are uniformly distributed in the nanopillar forests by flowing through the microchannels, and thus higher measurement repeatability is obtained compared with regular open SERS-active substrates. Moreover, the enhancement factor (EF) of the devices can be self-calibrated by utilizing the flat metal areas beside the forests as references. Accordingly, such SERS devices have an EF on the order of 5.2×105. Meanwhile, the devices can reduce the measurement time from several hours to about 10 minutes.
  • Keywords
    biological techniques; elemental semiconductors; etching; microfluidics; nanotechnology; photoresists; silicon; surface enhanced Raman scattering; Si; etching masks; microchannel structure; microfluidic surface enhanced Raman scattering devices; nanomaterial dot; nanopillar forest; photoresist; plasma bombardment; polydimethylsiloxane cap; Metals; Microfluidics; Nanobioscience; Nanoscale devices; Raman scattering; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734588
  • Filename
    5734588