DocumentCode :
277029
Title :
Photoconductive power switches
Author :
Anderson, N.C.
Author_Institution :
Dept. of Opt. & Laser Technol., British Aerosp. plc, Bristol, UK
fYear :
1992
fDate :
33654
Firstpage :
42461
Lastpage :
42465
Abstract :
Photoconductive switches offer potential advantages over conventional pulsed power switches which can be summarized briefly as follows: optical trigger isolation, low inductance, short risetime, short recovery time, scalability to high voltages and/or currents, operation at high repetition rates and light weight. These properties make photoconductive power switches attractive for various applications such as impulse radar or RF weapons. The author presents an introduction into photoconductive switches, including a comparison of three semiconductor materials (Si, GaAs and diamond) used for switching and a description of some of the GaAs photoconductive switching conducted at the Sowerby Research Centre
Keywords :
photoconducting devices; pulsed power technology; semiconductor switches; C; GaAs; Si; Sowerby Research Centre; diamond; inductance; optical trigger isolation; photoconductive power switches; recovery time; repetition rates; risetime; scalability; semiconductor materials;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Pulsed Power Technology, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
167884
Link To Document :
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