• DocumentCode
    277029
  • Title

    Photoconductive power switches

  • Author

    Anderson, N.C.

  • Author_Institution
    Dept. of Opt. & Laser Technol., British Aerosp. plc, Bristol, UK
  • fYear
    1992
  • fDate
    33654
  • Firstpage
    42461
  • Lastpage
    42465
  • Abstract
    Photoconductive switches offer potential advantages over conventional pulsed power switches which can be summarized briefly as follows: optical trigger isolation, low inductance, short risetime, short recovery time, scalability to high voltages and/or currents, operation at high repetition rates and light weight. These properties make photoconductive power switches attractive for various applications such as impulse radar or RF weapons. The author presents an introduction into photoconductive switches, including a comparison of three semiconductor materials (Si, GaAs and diamond) used for switching and a description of some of the GaAs photoconductive switching conducted at the Sowerby Research Centre
  • Keywords
    photoconducting devices; pulsed power technology; semiconductor switches; C; GaAs; Si; Sowerby Research Centre; diamond; inductance; optical trigger isolation; photoconductive power switches; recovery time; repetition rates; risetime; scalability; semiconductor materials;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Pulsed Power Technology, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    167884