DocumentCode
277029
Title
Photoconductive power switches
Author
Anderson, N.C.
Author_Institution
Dept. of Opt. & Laser Technol., British Aerosp. plc, Bristol, UK
fYear
1992
fDate
33654
Firstpage
42461
Lastpage
42465
Abstract
Photoconductive switches offer potential advantages over conventional pulsed power switches which can be summarized briefly as follows: optical trigger isolation, low inductance, short risetime, short recovery time, scalability to high voltages and/or currents, operation at high repetition rates and light weight. These properties make photoconductive power switches attractive for various applications such as impulse radar or RF weapons. The author presents an introduction into photoconductive switches, including a comparison of three semiconductor materials (Si, GaAs and diamond) used for switching and a description of some of the GaAs photoconductive switching conducted at the Sowerby Research Centre
Keywords
photoconducting devices; pulsed power technology; semiconductor switches; C; GaAs; Si; Sowerby Research Centre; diamond; inductance; optical trigger isolation; photoconductive power switches; recovery time; repetition rates; risetime; scalability; semiconductor materials;
fLanguage
English
Publisher
iet
Conference_Titel
Pulsed Power Technology, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
167884
Link To Document