15 GHz SPDT switch design using 0.15 µm GaAs technology for microwave applications

Author

Sanusi, Rasidah ; Ismail, Mohd Azmi ; Norhapizin, K. ; Rahim, Abdul ; Marzuki, Arjuna ; Yahya, Mohamed Razman

Author_Institution

TM R & D Sdn. Bhd., Innovation Centre, Cyberjaya

fYear

2008

fDate

1-3 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for microwave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercially available 0.15 mum GaAs pHEMT technology. At the operating frequency of 15 GHz, the SPDT switch has 1.89 dB insertion loss and 26.66 dB of isolation. It also demonstrates 28.8 dBm of input P1dB gain compression point (P_1dB) and 25.9 dBm of output P1dB.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MMIC; field effect transistor switches; gallium arsenide; integrated circuit design; microwave switches; GaAs; MMIC switch design; SPDT switch design; frequency 15 GHz; gain 1 dB; gain compression point; loss 1.89 dB; loss 26.66 dB; microwave applications; pHEMT; pseudomorphic high-electron mobility transistor; single pole double throw switch; size 0.15 mum; Frequency; Gallium arsenide; HEMTs; Isolation technology; MMICs; MODFETs; Microwave technology; Microwave transistors; PHEMTs; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Design, 2008. ICED 2008. International Conference on

Conference_Location

Penang

Print_ISBN

978-1-4244-2315-6

Electronic_ISBN

978-1-4244-2315-6

Type

conf

DOI

10.1109/ICED.2008.4786675

Filename

4786675