Title :
Installation considerations for IGBT AC drives
Author :
Skibinski, G. ; Maslowski, W. ; Pankau, J.
Author_Institution :
Allen Bradley Stand. Drives Div., Mequon, WI, USA
Abstract :
In the last four years, adjustable speed AC drive (ASD) manufacturers have migrated from bipolar junction transistor (BJT) semiconductors to insulated gate bipolar transistors (IGBTs) as the preferred output switching device. The advantage of IGBTs over BJTs is that device rise and fall time switching capability is 5-10 times faster, resulting in lower device switching loss and a more efficient drive. However, for a similar motor cable length as the BJT drive, the faster output voltage risetime of the IGBT drive may increase the dielectric voltage stress on the motor and cable due to a phenomenon called reflected wave. Faster output dv/dt transitions of IGBT drives also increases the possibility for phenomenon such as increased common mode (CM) electrical noise. Electromagnetic interference (EMI) problems and increased capacitive cable charging current problems. Also, experience suggests any pulse width modulated (PWM) drive with a steep fronted output voltage wave form may increase motor shaft voltage and lead to a bearing current phenomenon known as fluting. This paper provides a basic understanding of these issues, as well as solutions, to insure a successful drive system installation
Keywords :
AC motor drives; PWM invertors; electromagnetic interference; insulated gate bipolar transistors; machine bearings; power semiconductor switches; switching circuits; variable speed drives; EMI; IGBT AC drives; PWM drive; bearing current phenomenon; capacitive cable charging current; device fall time; device rise time; dielectric voltage stress; electromagnetic interference; faster output voltage risetime; fluting; increased common mode electrical noise; installation considerations; lower device switching loss; motor shaft voltage; output switching device; pulse width modulated drive; reflected wave phenomenon; steep fronted output voltage waveform; switching capability; Dielectrics; Electromagnetic interference; Insulated gate bipolar transistors; Pulse width modulation; Semiconductor device manufacture; Semiconductor device noise; Stress; Switching loss; Variable speed drives; Voltage;
Conference_Titel :
Textile, Fiber, and Film Industry Technical Conference, 1997., IEEE 1997 Annual
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-4090-6
DOI :
10.1109/TEXCON.1997.598530