The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs

Author

Sangiorgi, Enrico ; Palestri, Pierpaolo ; Esseni, David ; Fiegna, Claudio ; Selmi, Luca

Author_Institution

Univ. of Bologna, Cesena

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

48

Lastpage

57

Abstract

In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non- conventional device structures and channel materials.

Keywords

MOSFET; Monte Carlo methods; nanoelectronics; stochastic processes; Monte Carlo approach; Poisson equation; deca-nanometer MOSFET; electrostatic potential; multisubband approach; numerical stability; quantum corrections; quantum-mechanical effects; quasi-ballistic transport; semi-classical carrier transport; transport coupling; transport modeling; CMOS technology; Distribution functions; Electrostatics; MOSFETs; Monte Carlo methods; Numerical stability; Particle scattering; Poisson equations; Quantization; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European

Conference_Location

Munich

ISSN

1930-8833

Print_ISBN

978-1-4244-1125-2

Type

conf

DOI

10.1109/ESSCIRC.2007.4430248

Filename

4430248