Title :
Novel highly nonlinear memristive circuit elements for neural networks
Author :
Liu, Tong ; Kang, Yuhong ; Verma, Mohini ; Orlowski, Marius
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Highly nonlinear dynamics arises from novel serially and antiserially connected memristive switches. Antiserially connected memristors offer a device with built-in spiking neuron behavior. Serially connected memristors offer new functionality of a cascade of sigmoid staircase curves to represent multi-level spike-timing dependent plasticity (STDP). In a programming operation, a serial arrangement of two switches displays multiple time-delays between threshold transitions showing three distinct current levels and an arrangement of three switches four current levels spanning 6 orders of magnitude. Anti-serially connected resistive switches, aka resistive floating electrode device (RFED), can generate well-controlled spikes as a result of the history of the dynamic input. Both types of composite switches can be packed into a single intersection of a memristive crossbar architecture of 4F2. The switches have been manufactured as a multi-stack of Cu, TaOx, Pt materials with 32 nm of oxygen-deficient TaOx in a crossbar architecture.
Keywords :
memristors; neural nets; switches; Cu; Pt; RFED; STDP; TaOx; antiserially connected memristive switches; antiserially connected memristors; built-in spiking neuron behavior; composite switches; memristive crossbar architecture; multilevel spike-timing dependent plasticity; neural networks; nonlinear dynamics; nonlinear memristive circuit elements; oxygen-deficient TaOx; programming operation; resistive floating electrode device; serial switches arrangement; sigmoid staircase curves; Neuromorphics; Programming; memristive switches; neural hardware; nonlinear circuits; spiking neuron;
Conference_Titel :
Neural Networks (IJCNN), The 2012 International Joint Conference on
Conference_Location :
Brisbane, QLD
Print_ISBN :
978-1-4673-1488-6
Electronic_ISBN :
2161-4393
DOI :
10.1109/IJCNN.2012.6252460