DocumentCode
277104
Title
MOVPE grown Bragg stacks for microresonator devices
Author
Roberts, J.S. ; Sale, T.
Author_Institution
Dept. of Electron. Eng., Sheffield Univ., UK
fYear
1992
fDate
33683
Firstpage
42401
Lastpage
42407
Abstract
Atmospheric pressure MOVPE has been used to prepare DBR structures for applications in reflection modulators and vertical lasers. Two styles of DBR have been investigated, a simple two element stack and a four component design necessary to reduce the series resistance associated with the large band discontinuities of the AlAs-GaAs system. A VSEL showed a reduction in operating voltage by four when intermediate layers were included at each interface of the DBR. Reflectivity and X-ray diffraction can be used to characterise the operating wavelength and periodic length of the DBR respectively
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; optical modulation; optical resonators; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; Bragg stacks; DBR structures; GaAs-AlGaAs; MOVPE; X-ray diffraction; band discontinuities; distributed Bragg reflector; microresonator devices; reflection modulators; reflectivity; semiconductors; vertical lasers;
fLanguage
English
Publisher
iet
Conference_Titel
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
167996
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