• DocumentCode
    277104
  • Title

    MOVPE grown Bragg stacks for microresonator devices

  • Author

    Roberts, J.S. ; Sale, T.

  • Author_Institution
    Dept. of Electron. Eng., Sheffield Univ., UK
  • fYear
    1992
  • fDate
    33683
  • Firstpage
    42401
  • Lastpage
    42407
  • Abstract
    Atmospheric pressure MOVPE has been used to prepare DBR structures for applications in reflection modulators and vertical lasers. Two styles of DBR have been investigated, a simple two element stack and a four component design necessary to reduce the series resistance associated with the large band discontinuities of the AlAs-GaAs system. A VSEL showed a reduction in operating voltage by four when intermediate layers were included at each interface of the DBR. Reflectivity and X-ray diffraction can be used to characterise the operating wavelength and periodic length of the DBR respectively
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; optical modulation; optical resonators; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; Bragg stacks; DBR structures; GaAs-AlGaAs; MOVPE; X-ray diffraction; band discontinuities; distributed Bragg reflector; microresonator devices; reflection modulators; reflectivity; semiconductors; vertical lasers;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    III-V Compound Semiconductor Materials Growth, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    167996