DocumentCode :
277104
Title :
MOVPE grown Bragg stacks for microresonator devices
Author :
Roberts, J.S. ; Sale, T.
Author_Institution :
Dept. of Electron. Eng., Sheffield Univ., UK
fYear :
1992
fDate :
33683
Firstpage :
42401
Lastpage :
42407
Abstract :
Atmospheric pressure MOVPE has been used to prepare DBR structures for applications in reflection modulators and vertical lasers. Two styles of DBR have been investigated, a simple two element stack and a four component design necessary to reduce the series resistance associated with the large band discontinuities of the AlAs-GaAs system. A VSEL showed a reduction in operating voltage by four when intermediate layers were included at each interface of the DBR. Reflectivity and X-ray diffraction can be used to characterise the operating wavelength and periodic length of the DBR respectively
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; optical modulation; optical resonators; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; Bragg stacks; DBR structures; GaAs-AlGaAs; MOVPE; X-ray diffraction; band discontinuities; distributed Bragg reflector; microresonator devices; reflection modulators; reflectivity; semiconductors; vertical lasers;
fLanguage :
English
Publisher :
iet
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
167996
Link To Document :
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