Title :
Chemical beam epitaxy of InP/InGaAsP: current status and future prospects
Author :
Skevington, P.J.
Author_Institution :
BT Labs., Ipswich, UK
Abstract :
Chemical beam epitaxy (CBE) is a high vacuum crystal growth technique which employs gaseous sources in the molecular flow regime. As such, it seeks to combine the chief advantages of both MOVPE and MBE. Gaseous sources offer the prospect of flexible, reproducible flux control, whilst molecular beams provide the capacity for sharp interfaces and high lateral uniformity. The author assesses the extent to which the potential of CBE has been realised in the growth of InP/InGaAsP
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum wells; CBE; InP-InGaAsP; chemical beam epitaxy; current status; flux control; future prospects; high vacuum crystal growth technique; lateral uniformity; multiple quantum wells; semiconductors; sharp interfaces;
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
