CBE growth of GaAs/GaAlAs device structures using novel precursors

The chemical beam epitaxy (CBE) technique offers very important potential as a next-generation epitaxial growth process. Despite the relative immaturity of the technique, the growth of high purity InP-based materials has already been demonstrated, and major advances have also been made in reducing unintentional carbon impurity levels in CBE GaAs/GaAlAs layers, with considerable effort continuing to be invested in developing new aluminium CBE precursors. The present paper describes an appraisal of the CBE growth technique for the growth of advanced GaAs-based semiconductor devices, and highlights key advantages compared to currently used MBE and MOVPE processes