Title :
MOVPE growth for the fabrication of OEICs
Author :
Thompson, J. ; Wood, A.K. ; Charles, P.M. ; Williams, P.J. ; Moseley, A.J. ; Pritchard, R. ; Hamilton, B.
Author_Institution :
GEC Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
The authors describe structural and optical properties of InP based materials deposited on partially masked substrates (ie selective area epitaxy) and after multistage epitaxy with the aim of producing integrated device structures. A series of growth studies have been conducted with the aim of identifying the benefits and limitations of the MOVPE technique. All growths were performed in an MOVPE reactor operating at a pressure of 200 mBar and temperature of 630°C. Typical growth rates ranged from 4-7 Å/sec. Reagents used were trimethyl and triethyl group III and hydride group V precursors
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit technology; integrated optoelectronics; semiconductor devices; semiconductor growth; vapour phase epitaxial growth; GaInAs; GaInAsP; MOVPE; OEIC; growth rates; integrated device structures; multistage epitaxy; partially masked substrates; selective area epitaxy; semiconductors;
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
