Working quantum efficiency of cdte solar cell

Author

Cheng, Zimeng ; Lo, Kwok ; Opyrchal, Halina ; Pan, Jingong ; Chen, Dongguo ; Tao Zhou ; Wang, Tao Zhou Qi ; Georgiou, George E. ; Chin, Ken K.

Author_Institution

Apollo CdTe Solar Energy Center (pending), NJIT, Newark, NJ, USA

fYear

2010

fDate

20-25 June 2010

Abstract

For p-CdTe/n-CdS solar cell, it is reported that the quantum efficiency and the collection efficiency are not only wave length dependent but also most importantly voltage dependent, since the CdTe solar cell is believed to be the diode which has non-shallow acceptors and deep levels where the roles of these levels are not clear. In this study, the quantum efficiency of CdTe solar cell with various optical biases, which is titled as “Working Quantum Efficiency (WQE)”, is measured. The result is compared with industrialized amorphous silicon solar cell. Simulation models are given to explain those measurements. The result shows the measurements of WQE is one of important evaluations for CdTe solar cell as well as it can contribute to its characterization and improvement.

Keywords

amorphous semiconductors; cadmium compounds; deep levels; silicon; solar cells; CdTe-CdS; collection efficiency; deep levels; industrialized amorphous silicon solar cell; nonshallow acceptors; working quantum efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5616372

Filename

5616372