DocumentCode :
2771617
Title :
An unreleased mm-wave Resonant Body Transistor
Author :
Wang, Wentao ; Popa, Laura C. ; Marathe, Radhika ; Weinstein, Dana
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
1341
Lastpage :
1344
Abstract :
In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO2 is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4× lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.
Keywords :
MOSFET; micromechanical resonators; MM-wave resonant body transistor; active high-Q device; hybrid MEMS-CMOS technology; longitudinal resonance; microelectromechanical resonator; microwave CMOS circuit designer; quality factor; silicon FinFET; Acoustics; CMOS integrated circuits; FETs; Logic gates; Resonant frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734682
Filename :
5734682
Link To Document :
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