Spatial selectivity of impurity free vacancy disordering using different dielectric layers for photonic/optoelectronic integrated circuits

Author

Fu, L. ; Lever, P. ; Tan, H.H. ; Wong-Leung, J. ; Deenapanray, P.N.K. ; Reece, P. ; Gal, M. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

73

Lastpage

78

Abstract

This paper reviews the methods of suppressing interdiffusion during impurity free disordering (IFVD) process by using Ga-doped spin-on glass film, SiO₂/Ga_xO_y bi-layer and TiO₂/Ga_xO_y bi-layer. The mechanism of interdiffusion suppression based on controlling of group III vacancy generation and diffusion was introduced and results were compared for both quantum well and quantum dot structures. This is crucial for realization of spatial selectivity of IFVD for photonic/optoelectronic integrated circuits.

Keywords

III-V semiconductors; chemical interdiffusion; dielectric thin films; gallium; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; semiconductor thin films; silicon compounds; titanium compounds; vacancies (crystal); AlGaAs-GaAs; Ga-doped spin-on glass film; SiO₂-Ga_xO_y; SiO₂/Ga_xO_y bilayer; TiO₂-Ga_xO_y; TiO₂/Ga_xO_y bilayer; dielectric layers; group III vacancy generation; impurity free vacancy disorder; interdiffusion suppression; optoelectronic integrated circuits; photonic-electronic integrated circuits; quantum dot structures; quantum well; Atom optics; Dielectrics; Impurities; Optical devices; Optical modulation; Optical waveguides; Photonic band gap; Photonic integrated circuits; Quantum dot lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283486

Filename

1283486