Title :
A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power
Author :
Jin, Yanyu ; Sanduleanu, Mihai A T ; Rivero, Eduardo Alarcon ; Long, John R.
Author_Institution :
Delft Univ. of Technol., Delft
Abstract :
A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.
Keywords :
CMOS analogue integrated circuits; microstrip lines; millimetre wave power amplifiers; transmission lines; CMOS technology; bandwidth 46 GHz to 53 GHz; current 73 mA; frequency 52 GHz; frequency 60 GHz; gain 10 dB; gain 25 dB; inter-stage matching; load resonators; microstrip transmission lines; millimeter-wave power amplifier; signal distribution; size 90 nm; voltage 1.5 V; Bandwidth; CMOS technology; MIM capacitors; Microstrip resonators; Millimeter wave measurements; Millimeter wave technology; Power amplifiers; Power generation; Power transmission lines; Transmission line measurements;
Conference_Titel :
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1125-2
DOI :
10.1109/ESSCIRC.2007.4430297
