A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power

Author

Jin, Yanyu ; Sanduleanu, Mihai A T ; Rivero, Eduardo Alarcon ; Long, John R.

Author_Institution

Delft Univ. of Technol., Delft

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

276

Lastpage

279

Abstract

A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum² die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.

Keywords

CMOS analogue integrated circuits; microstrip lines; millimetre wave power amplifiers; transmission lines; CMOS technology; bandwidth 46 GHz to 53 GHz; current 73 mA; frequency 52 GHz; frequency 60 GHz; gain 10 dB; gain 25 dB; inter-stage matching; load resonators; microstrip transmission lines; millimeter-wave power amplifier; signal distribution; size 90 nm; voltage 1.5 V; Bandwidth; CMOS technology; MIM capacitors; Microstrip resonators; Millimeter wave measurements; Millimeter wave technology; Power amplifiers; Power generation; Power transmission lines; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European

Conference_Location

Munich

ISSN

1930-8833

Print_ISBN

978-1-4244-1125-2

Type

conf

DOI

10.1109/ESSCIRC.2007.4430297

Filename

4430297