Title :
2×2 electrooptical switch in silicon-on-insulator waveguide
Author :
Yan, Qingfeng ; Yu, Jinzhong ; Chen, Shaowu ; Fan, Zhongchao ; Xia, Jinsong ; Liu, Zhongli
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
A 2×2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358 mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7 dB and crosstalk of 4.8 dB has been observed.
Keywords :
Mach-Zehnder interferometers; electro-optical modulation; electro-optical switches; elemental semiconductors; optical couplers; optical fabrication; optical waveguides; p-i-n diodes; silicon-on-insulator; 3 dB; 358 mA; 4.8 dB; 7.7 dB; Mach-Zehnder interferometer electrooptical switch integration; PIN structure; Si; carriers plasma dispersion effect; combiner; crosstalk; extinction ratio; injection current; light modulation; multimode interference couplers; silicon-on-insulator waveguide; splitter; Couplers; Dispersion; Electrooptical waveguides; Extinction ratio; Fabrication; Interference; Optical modulation; Plasma waves; Silicon on insulator technology; Switches;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283490
