Ultra low-voltage and low-power dB-linear V-I converter using composite NMOS transistors

Author

Duong, Quoc-Hoang ; Nguyen, Trung-Kien ; Duong, Hoang-Nam ; Lee, Sang-Gug

Author_Institution

RFME Lab., Inf. & Commun. Univ., Daejeon, South Korea

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

101

Lastpage

104

Abstract

In this paper, an ultra low-voltage and low-power exponential V-I converter is developed, using Taylor series expansion for realizing the exponential characteristics. The new CMOS exponential V-I converter is based on the composite NMOS transistors. The newly proposed approximation function based on Taylor´s concept is used to extend the dB-linear output current range. In a 0.25 μm CMOS process, the simulations show more than 20 dB output current range and 18 dB-linear range with the linearity error less than ±0.5 dB. The average power dissipation is less than 50 μW at ±1 V supply voltage. The proposed EVIC can be used for the design of an extremely low-voltage and low-power variable gain amplifier (VGA) and automatic gain control (AGC).

Keywords

CMOS integrated circuits; automatic gain control; integrated circuit design; integrated circuit modelling; power MOSFET; power amplifiers; power convertors; semiconductor device models; -1 V; 0.25 micron; 18 dB; 20 dB; AGC; CMOS exponential V-I converter; Taylor series expansion; automatic gain control; composite NMOS transistors; linearity error; low-power dB-linear V-I converter; low-power variable gain amplifier; power dissipation; ultralow-voltage dB-linear V-I converter; CMOS process; CMOS technology; Circuits; Energy consumption; Linearity; MOSFETs; Taylor series; Transistors; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283492

Filename

1283492