Rigorous modeling of high-speed semiconductor devices

Author

Palankovski, Vassil ; Selberherr, Siegfned

Author_Institution

Inst. fur Mikroelektronik, Technische Univ. Wien, Vienna, Austria

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

127

Lastpage

132

Abstract

We present the state-of-the-art in simulation for industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of Heterojunction Bipolar transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.

Keywords

Ge-Si alloys; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; semiconductor materials; GaAs; HBT; HEMT; III-V compound semiconductors based devices; SiGe; SiGe/Si based devices; critical modeling; current transport models; device simulators; heterojunction bipolar transistors; heterostructure devices; high electron mobility transistors; high-speed semiconductor devices; minimos-NT; rigorous modeling; two-dimensional hydrodynamic analyses; Composite materials; Computational modeling; Costs; Energy consumption; Frequency; Germanium silicon alloys; III-V semiconductor materials; Quantum computing; Semiconductor devices; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283498

Filename

1283498