Dynamic thermal circuit of SOI MOSFETs for fast digital operation

Author

Cheng, Ming-C ; Jun, Lin ; Shen, Min

Author_Institution

Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

141

Lastpage

144

Abstract

A dynamic thermal circuit for SOI MOSFETs with time-varying thermal resistances and capacitances has been developed for fast digital operation of SOI CMOS circuits. The thermal circuit is derived from a dynamic thermal model resulting from the variational principle. With the circuit implemented in SPICE, these time-varying circuit elements are able to reasonably describe extremely fast evolution of the temperature profile in SOI devices without including a large number of nodes.

Keywords

CMOS digital integrated circuits; MOSFET; SPICE; capacitance; elemental semiconductors; high-speed integrated circuits; semiconductor device models; silicon-on-insulator; thermal resistance; time-varying networks; variational techniques; SOI CMOS circuits; SOI MOSFETs; SPICE; Si-SiO₂; capacitances; dynamic thermal circuit model; fast digital operation; temperature profile; time-varying circuit elements; time-varying thermal resistances; variational principle; Capacitance; Circuits; MOSFETs; Power generation; Semiconductor films; Silicon; Substrates; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283501

Filename

1283501