Title :
Dynamic thermal circuit of SOI MOSFETs for fast digital operation
Author :
Cheng, Ming-C ; Jun, Lin ; Shen, Min
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
Abstract :
A dynamic thermal circuit for SOI MOSFETs with time-varying thermal resistances and capacitances has been developed for fast digital operation of SOI CMOS circuits. The thermal circuit is derived from a dynamic thermal model resulting from the variational principle. With the circuit implemented in SPICE, these time-varying circuit elements are able to reasonably describe extremely fast evolution of the temperature profile in SOI devices without including a large number of nodes.
Keywords :
CMOS digital integrated circuits; MOSFET; SPICE; capacitance; elemental semiconductors; high-speed integrated circuits; semiconductor device models; silicon-on-insulator; thermal resistance; time-varying networks; variational techniques; SOI CMOS circuits; SOI MOSFETs; SPICE; Si-SiO2; capacitances; dynamic thermal circuit model; fast digital operation; temperature profile; time-varying circuit elements; time-varying thermal resistances; variational principle; Capacitance; Circuits; MOSFETs; Power generation; Semiconductor films; Silicon; Substrates; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283501
