DocumentCode :
2771920
Title :
Porous silicon device modeling and linearisation technique
Author :
Pandit, Soumya ; Adhya, Animesh ; Pramanik, C. ; Saha, H.
Author_Institution :
Dept. of Electron. & Commun. Eng., Meghnad Saha Inst. of Technol., Kolkata, India
fYear :
2003
fDate :
16-18 Dec. 2003
Firstpage :
145
Lastpage :
148
Abstract :
This paper presents an approach for porous silicon device modeling by using porous silicon as a distributive RC network which will enable the simulation of a porous silicon sensor using VLSI CAD tools. Porous silicon based sensors are compatible to silicon IC processing and can be integrated on the same chip along with its signal processing unit. To make a smart sensor, along with device modeling, a linearisation scheme has also been presented, assuming a non linear response of the sensor. The scheme provides a digital path for the non-linearity correction of the sensor response but in an analog domain. The entire scheme has been simulated using T-SPICE.
Keywords :
CAD; EPROM; SPICE; VLSI; amplifiers; digital signal processing chips; digital-analogue conversion; elemental semiconductors; equivalent circuits; linearisation techniques; porous semiconductors; programmable circuits; semiconductor device models; semiconductor devices; sensors; silicon; Si; T-SPICE; VLSI CAD tools; analog domain; digital path; distributive RC network; linearisation technique; nonlinear response; nonlinearity correction; porous silicon device modeling; porous silicon sensor; signal processing unit; silicon IC processing; smart sensor; Capacitance; Capacitive sensors; Chemical sensors; Dielectric constant; Electromechanical sensors; Integrated circuit modeling; Intelligent sensors; Linearization techniques; Silicon devices; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
Type :
conf
DOI :
10.1109/EDSSC.2003.1283502
Filename :
1283502
Link To Document :
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