A 2.4 GHz fully integrated CMOS VCO with direct FM/FSK modulation capability

Author

Choi, Y.B. ; Teo, T.H. ; Yeoh, W.G.

Author_Institution

Inst. of Microelectron., Singapore, Singapore

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

175

Lastpage

178

Abstract

The design and implementation of a 2.4 GHz fully integrated VCO with direct FM/FSK modulation capability is presented. The VCO utilizes an accumulation mode MOS (aMOS) varactor as the major frequency tuning element. A tiny aMOS varactor of similar geometry is also incorporated in parallel for direct baseband modulation. Abrupt CV profile of aMOS varactor is linearized through direct coupling to the full-swing of the VCO tank circuit. Concept of this large-signal CV linearization is fully elaborated. The VCO prototype has been fabricated in 0.35 μm standard CMOS process. Measured at 3.0 V supply, the VCO demonstrates 14% tuning range, 920 KHz/V linear modulation gain, -103 dBc/Hz phase noise at 100 KHz offset frequency with core current drawn of approximately 7 mA.

Keywords

CMOS integrated circuits; MIS devices; frequency shift keying; varactors; voltage regulators; 0.35 micron; 100 kHz; 2.4 GHz; 3.0 V; 7 mA; CMOS process; FM-FSK modulation; accumulation mode MOS varactor; frequency modulation; frequency-shift keying; integrated CMOS voltage controlled oscillator; linear modulation gain; offset frequency; Baseband; Chirp modulation; Circuit optimization; Coupling circuits; Frequency modulation; Frequency shift keying; Geometry; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283509

Filename

1283509