Title :
RF MOSFET: recent advances and future trends
Author :
Liou, Juin J. ; Schwierz, Frank
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
Abstract :
Recent advances in CMOS processing, continuous scaling of gate length, and progress in SOI (Silicon on Insulator) have stirred serious discussions on the suitability of MOSFETs for RF/microwave applications. This paper covers the recent advances and current status of CMOS as the dominating technology in VLSI, future trend of RF MOSFETs, and applications of MOSFETs in RF electronics. Despite some lingering debates, the prospects for RF MOSFETs with operating frequencies in the lower GHz range are very promising.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; elemental semiconductors; microwave transistors; silicon-on-insulator; CMOS processing; RF MOSFET; RF electronics; SOI; Si-SiO2; VLSI; microwave applications; silicon on insulator; Clocks; Electron mobility; FETs; Gallium arsenide; Insulation; Logic circuits; MOSFET circuits; Radio frequency; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283511
