DocumentCode
2772098
Title
RF MOSFET: recent advances and future trends
Author
Liou, Juin J. ; Schwierz, Frank
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
185
Lastpage
192
Abstract
Recent advances in CMOS processing, continuous scaling of gate length, and progress in SOI (Silicon on Insulator) have stirred serious discussions on the suitability of MOSFETs for RF/microwave applications. This paper covers the recent advances and current status of CMOS as the dominating technology in VLSI, future trend of RF MOSFETs, and applications of MOSFETs in RF electronics. Despite some lingering debates, the prospects for RF MOSFETs with operating frequencies in the lower GHz range are very promising.
Keywords
CMOS integrated circuits; MOSFET; VLSI; elemental semiconductors; microwave transistors; silicon-on-insulator; CMOS processing; RF MOSFET; RF electronics; SOI; Si-SiO2; VLSI; microwave applications; silicon on insulator; Clocks; Electron mobility; FETs; Gallium arsenide; Insulation; Logic circuits; MOSFET circuits; Radio frequency; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283511
Filename
1283511
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