Title :
Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing
Author :
Chen, Zhi ; Garg, Parul ; Ong, Aarong Pangling
Author_Institution :
Dept. of Electr. & Comput. Eng., Kentucky Univ., Lexington, KY, USA
Abstract :
In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al. showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.
Keywords :
1/f noise; MOSFET; annealing; dangling bonds; elemental semiconductors; flicker noise; hole traps; hot carriers; interface states; isotope effects; silicon; MOS transistors; Si; Si dangling bond; deuterium annealing; flicker noise; hole related oxide traps; hot-carrier induced 1/f noise; hydrogen annealing; interface traps; isotope effect; 1f noise; Annealing; Deuterium; Electron traps; Hot carriers; Hydrogen; Isotopes; MOS devices; Noise reduction; Semiconductor device noise;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283513
