Title :
Modeling effects of velocity overshoot in extremely scaled MOSFETs
Author :
Tong, J. ; Zou, X. ; Xu, J.P. ; Shen, X.B.
Abstract :
A physical model of velocity-overshoot of hot-carriers based on the balanced equation of energy is developed and implemented in MOSFET models. Derived from the Boltzmann equation, a simple analytic simulation model can be put into the BSIM3 simulation model. There are better identical verifications among the model of velocity overshoot, standard BSIM3 model (not including effects of velocity overshoot) and real device data.
Keywords :
Boltzmann equation; MOSFET; hot carriers; semiconductor device models; Boltzmann equation; MOSFET; analytic simulation model; balanced equation; hot-carriers; velocity overshoot; Analytical models; Boltzmann equation; Circuit simulation; Electrons; Hot carriers; MOS devices; MOSFETs; Physics; Scattering; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283516
