A 6 mW low noise amplifier for 3.1–10.6 GHz UWB application

Author

Diddi, Varish ; Srivastava, Kumar Vaibhav ; Biswas, Animesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India

fYear

2011

fDate

28-30 Jan. 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a single stage low-noise amplifier (LNA) using cascode topology for low-power UWB applications. Resistive feedback is used to obtain large bandwidth. The LNA achieves peak gain of 11.8 dB and noise figure varying from 1.72 - 3.62 dB within the band of 3.1 - 10.6 GHz. The LNA uses supply of 2 V while consuming only 6 mW of dc power. The technology used for design is 0.25 μm IHP SiGe BiCMOS which employs Heterojunction Bipolar Transistor (HBT). The output 1 dB compression point and input IP3 for LNA are -23 dBm and -12.48 dBm respectively.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; network topology; ultra wideband communication; HBT; IHP BiCMOS; SiGe; cascode topology; frequency 3.1 GHz to 10.6 GHz; gain 11.8 dB; heterojunction bipolar transistor; low-power UWB applications; noise figure 1.72 dB to 3.62 dB; power 6 mW; single stage LNA; size 0.25 mum; ultrawideband communication systems; voltage 2 V; BiCMOS integrated circuits; Gain; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Resistance; Silicon germanium; Heterojunction Bipolar Transistor (HBT); Low-power LNA; SiGe BiCMOS; Ultra-wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Communications (NCC), 2011 National Conference on

Conference_Location

Bangalore

Print_ISBN

978-1-61284-090-1

Type

conf

DOI

10.1109/NCC.2011.5734714

Filename

5734714