Minority-carrier exclusion model for circular Spreading-Resistance Temperature sensor based on ultra-thin Silicon on insulator

Author

Wu, Z.H. ; Lai, P.T. ; Li, Bin ; Liu, B.Y. ; Zheng, X.R.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., China

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

255

Lastpage

258

Abstract

A two-dimensional model is developed to explain the minority-carrier exclusion effect in circular Spreading-Resistance Temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.

Keywords

elemental semiconductors; silicon; silicon-on-insulator; temperature sensors; Si; bias currents; circular spreading resistance temperature sensor; conventional one-dimensional model; doping levels; minority carrier exclusion model; ultra thin silicon on insulator; Aerospace electronics; Charge carrier processes; Electric resistance; Physics; Predictive models; Semiconductor process modeling; Sensor phenomena and characterization; Silicon on insulator technology; Temperature sensors; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283526

Filename

1283526