• DocumentCode
    2772393
  • Title

    Profiling and comparison of internal electrical environments of p and n-channel SOI MOSFETs

  • Author

    Mody, J. ; Venkatachalam, A. ; Rodrigues, O. ; Jambulingam, S. ; Ghosh, P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Syracuse Univ., NY, USA
  • fYear
    2003
  • fDate
    16-18 Dec. 2003
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    Internal electrical environment of p-channel SOI MOSFET is simulated and compared with the properties of n-channel SOI MOSFET. Electrical characteristics are modified due to the charge redistribution resulting from the applied bias voltage. Effects of channel shrinkage, for both n- and p-channel have been documented.
  • Keywords
    MOSFET; electric field effects; electric potential; silicon-on-insulator; Si; applied bias voltage; channel shrinkage; charge redistribution; electrical properties; internal electrical environments; n-channel SOI MOSFETs; p-channel SOI MOSFETs; Dielectric thin films; Doping; Electric variables; Insulation; MOS devices; MOSFETs; Semiconductor thin films; Silicon; Thin film devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
  • Print_ISBN
    0-7803-7749-4
  • Type

    conf

  • DOI
    10.1109/EDSSC.2003.1283527
  • Filename
    1283527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2772393