Superjunction LDMOS with drift region charge-balanced by distributed hexagon p-islands

Author

Xu, H.P. ; Ma, V.W.Y. ; Sun, I. S M ; Ng, W.T. ; Liang, Y.C.

Author_Institution

VLSI Res. Group, Toronto Univ., Ont., Canada

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

313

Lastpage

316

Abstract

A new device structure suitable for practical implementation of silicon superjunction LDMOS is proposed. With hexagonal p-islands distributed in the drift region of a conventional LDMOS (SJ-HexLDMOS), the tradeoff between breakdown voltage (BV_dss) and specific on resistance (R_on,sp) can be improved. Maximum efficiency in depleting the drift region upon reverse bias can be achieved when those p-islands are arranged in a honeycomb shape. As the lateral superjunction layer gets thinner, the combined effect of superjunction and RESURF makes the optimization more complicated and the benefit of the SJ-structure is compromised.

Keywords

MOSFET; electric resistance; elemental semiconductors; semiconductor device breakdown; semiconductor device models; silicon; Si; breakdown voltage; distributed hexagon p-islands; electric resistance; honeycomb shape; silicon superjunction LDMOS; superjunction layer; BiCMOS integrated circuits; CMOS process; CMOS technology; Doping; Monolithic integrated circuits; Power integrated circuits; Shape; Sun; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283539

Filename

1283539