Smart MEMS concept for RF and millimeterwave communications

Author

Dubuc, D. ; Coustou, A. ; Ducarouge, B. ; Grenier, K. ; Pons, P. ; Parra, T. ; Graffeuil, J. ; Plana, R.

Author_Institution

Nat. Centre for Sci. Res., Univ. Paul Sabatier, Toulouse, France

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

319

Lastpage

322

Abstract

This paper outlines the Microsystem concept for the next communications systems. Among the results, we can note that the use of hetero-junction concept in silicon bipolar transistor translates into operating frequencies higher than 100 GHz. Moreover, the MEMS concept leads to very low loss passive circuits useable up to millimeterwave and having the ability of agility. Furthermore, these technologies are becoming to be involved in the realization of smart microsystems for millimeter-wave applications like reconfigurable frond end.

Keywords

Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; micromechanical devices; millimetre wave bipolar transistors; satellite communication; silicon; MEMS; RF communications; SiGe; microsystem; millimeterwave communications; silicon bipolar transistor; Communication system traffic control; Energy consumption; Germanium silicon alloys; Micromechanical devices; Millimeter wave technology; Radio frequency; Radio spectrum management; Silicon germanium; Switches; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283540

Filename

1283540