High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes

In_0.53Ga_0.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr₂O₃ into the growth melt. A very low background impurity is obtained(~10¹⁵cm^-3). The corresponding mobility also significantly increases from 15321 to 32171 cm²/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, In_0.53Ga_0.47As Schottky diodes with a barrier height of ~0.7 eV are constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment