Model analysis of electron tunneling through n-type silicon/silicon oxide interfaces

Interfaces between n-type silicon and silicon oxide are investigated by comparing the experimental current-voltage characteristics with corresponding theoretical calculations. Two models, namely simple tunneling and tunneling surface quantum well models, are used for the calculations. According to the present results, even if the field penetration in Si may be significant, the contribution of the field-induced states is not essential in practical analysis for gate oxide thickness down to 2.1 nm.