DocumentCode
2772847
Title
The application one-dimensional and quasi one-dimensional Thomas-Fermi equation for the modelling of an intra-atomic potential in the ultrathin gate dielectric
Author
Krasnikov, G.Ya.
Author_Institution
Res. & Dev. Inst. for Molecular Electron., MICRON, Moscow, Russia
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
361
Lastpage
364
Abstract
The statement of the one-dimensional Thomas-Fermi equation is considered. Its analytical solution is obtained. The procedure of adaptation of a solution of the three-dimensional Thomas-Fermi equation for an one-dimensional case is offered in connection with a problem of tunneling of charge carriers through ultrathin gate dielectric.
Keywords
Thomas-Fermi model; dielectric materials; dielectric thin films; electron density; tunnelling; analytical solution; charge carrier tunneling; electron density; intraatomic potential modelling; one-dimensional Thomas-Fermi equation; quasi one-dimensional Thomas-Fermi equation; three-dimensional Thomas-Fermi equation; ultrathin gate dielectric materials; Atomic measurements; Boundary conditions; Dielectrics; Electrons; Elementary particle vacuum; Equations; Modems; Potential energy; Quantum computing; Quantum mechanics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283550
Filename
1283550
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