Photosensitivity control of detectors based on surface plasmon-polariton resonance in Schottky structures

Author

Dmitruk, N. ; Mayeva, O. ; Mamikin, S. ; Romanenko, P. ; Yastrubchak, O.

Author_Institution

Inst. for Phys. Semicond., Acad. of Sci., Kiev, Ukraine

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

309

Abstract

Enhanced quantum efficiencies have been obtained for GaAs(InP) based MSM-photodetectors using grating coupling of incident radiation into surface plasma waves confined to the air-metal interface. We demonstrate that the photosensitivity control of these detectors over the wide range of visible spectrum may be attainable either with variation of the grating parameters or with suitable choices of device processing

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; polaritons; surface plasmons; GaAs; InP; MSM-photodetectors; Schottky diode structures; air-metal interface; device processing; grating coupling; grating parameters; incident radiation; photodetectors; photosensitivity control; quantum efficiencies; surface plasma waves; surface plasmon-polariton resonance; Detectors; Diffraction gratings; Holography; Optical coupling; Optical diffraction; Optical modulation; Optical surface waves; Photodetectors; Resonance; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625257

Filename

625257