Thermal stability of Ni monosilicide formed with Ti capping layer

Author

Park, Soo-Jin ; Lee, Keun-Woo ; You, Jung-Joo ; Kim, Ju-Youn ; Bae, Kyoo-Sik

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

411

Lastpage

414

Abstract

NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited and then annealed in the N₂ ambient at 300-800°C in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700°C for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600°C. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

Keywords

Auger electron spectra; chemical interdiffusion; field emission electron microscopy; nickel compounds; rapid thermal annealing; scanning electron microscopy; thermal stability; thin films; 100 s; 300 to 800 degC; AES; FESEM; Ni diffusion; Ni monosilicide compounds; Ni-Si; NiSi films agglomeration; RTA; Ti-Ni-Si; Ti-capping layer; annealing; four point probe; rapid thermal annealing; sheet resistance; thermal properties; thermal stability; Conductivity; Electrodes; MOSFET circuits; Probes; Rapid thermal annealing; Silicidation; Silicides; Temperature; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283561

Filename

1283561