• DocumentCode
    2773241
  • Title

    Quantum cascade laser: a unipolar intersubband semiconductor laser

  • Author

    Capasso, F. ; Faist, J. ; Sivco, D.L. ; Sirtori, C. ; Hutchinson, A.L. ; Chu, S.N.G. ; Cho, A.Y.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    71
  • Lastpage
    72
  • Abstract
    A new semiconductor injection laser (Quantum Cascade Laser) which differs in a fundamental way from diode lasers has been demonstrated. It relies on only one type of carrier (it is a unipolar semiconductor laser), and on electronic transitions between conduction band energy levels of quantum wells
  • Keywords
    III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; laser transitions; quantum well lasers; ridge waveguides; semiconductor lasers; waveguide lasers; 4.26 mum; AlInAs-GaInAs; conduction band energy levels; diode lasers; electronic transitions; quantum cascade laser; quantum wells; semiconductor injection laser; unipolar intersubband semiconductor laser; unipolar semiconductor laser; Atom lasers; Atomic beams; Diode lasers; Laser modes; Laser transitions; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature sensors; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519139
  • Filename
    519139