DocumentCode
277374
Title
980 nm pump source lasers for EDFAs
Author
Hall, J. ; Farries, M. ; Ogden, R. ; Bradley, R. ; Nicklin, R.
Author_Institution
GEC-Marconi Mater. Technol. Ltd., Caswell, UK
fYear
1992
fDate
33744
Firstpage
42430
Lastpage
42433
Abstract
Strained layer GaInAs/GaAlAs ridge waveguide lasers operating at 980 nm are being developed for exploitation as pump sources for erbium doped fibre optical amplifiers (EDFAs). Advances in design and fabrication now allow higher output powers to be achieved, and initial degradation problems have been overcome to give more reliable, longer lived devices to produce practical optical pump sources
Keywords
III-V semiconductors; aluminium compounds; erbium; fibre lasers; gallium arsenide; gradient index optics; indium compounds; optical communication equipment; optical pumping; optical waveguides; rectangular waveguides; semiconductor junction lasers; 980 nm; Er3+ doped fibre amplifiers; GRIN layers; GaInAs-GaAlAs ridge waveguide lasers; III-V semiconductors; design; fabrication; higher output powers; optical communication; pump source lasers; strained layers;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Amplifiers for Communications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
168424
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