Title :
Characterization of deeply etched uniform sidewall gratings in InP/InGaAsP ridge waveguides
Author :
Dylewicz, R. ; Green, R. ; Sorel, M. ; Bryce, A.C. ; De La Rue, R.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
We report on the spectral characterization of 1st order sidewall gratings with constant period of Lambda = 236 nm, which were deeply etched into InP-based passive ridge waveguides. Periodic structures of this type with variable geometry (adjustable recess depth) may be used as the mirrors with well-controlled reflectivity for laser facets and intracavity reflectors, as well as in optical pulse compressors, when grating period chirp is imposed.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; optical waveguides; periodic structures; ridge waveguides; InP-InGaAsP; deeply etched uniform sidewall gratings; passive ridge waveguides; periodic structures; Etching; Geometrical optics; Gratings; Indium phosphide; Mirrors; Optical pulses; Optical waveguides; Periodic structures; Reflectivity; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5191474
