Characterization of deeply etched uniform sidewall gratings in InP/InGaAsP ridge waveguides

Author

Dylewicz, R. ; Green, R. ; Sorel, M. ; Bryce, A.C. ; De La Rue, R.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

We report on the spectral characterization of 1^st order sidewall gratings with constant period of Lambda = 236 nm, which were deeply etched into InP-based passive ridge waveguides. Periodic structures of this type with variable geometry (adjustable recess depth) may be used as the mirrors with well-controlled reflectivity for laser facets and intracavity reflectors, as well as in optical pulse compressors, when grating period chirp is imposed.

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; optical waveguides; periodic structures; ridge waveguides; InP-InGaAsP; deeply etched uniform sidewall gratings; passive ridge waveguides; periodic structures; Etching; Geometrical optics; Gratings; Indium phosphide; Mirrors; Optical pulses; Optical waveguides; Periodic structures; Reflectivity; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5191474

Filename

5191474