Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method

Author

Nakahara, Kenta ; Kawashima, Yuki ; Sat, Muneharu ; Matsunaga, Takeaki ; Yamamot, Kousuke ; Nakamura, William Makoto ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Uchida, Giichiro ; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan

fYear

2010

fDate

20-25 June 2010

Abstract

We have deposited cluster-free P-doped a-Si:H films using SiH₄+PH₃ multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH₃]/[SiH₄]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PH_x radicals enhance surface reaction probability of SiH₃ radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<;5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9 × 10¹⁵ cm^-3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.

Keywords

discharges (electric); plasma CVD; semiconductor doping; solar cells; SiH:P; activation energy; bandgap energy; cluster-free P-doped a-Si:H films; conductivity; emission intensity; gas flow rate; multi-hollow discharge plasma CVD;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5616514

Filename

5616514