Classification of defects in polycrystalline Si by temperature dependence of Electroluminescence under forward and reverse-biases

Electroluminescence imaging is developing to an established tool for quality assurance in solar cell characterization. In this study, we classify the crystal defects by investigating the temperature dependence under forward-bias and reverse-bias EL emission. As a result, EL intensity under forward-bias increased, but EL intensity under reverse bias showed both increasing and decreasing phenomena depended on each crystal defects. We report that the classification of the defects is possible by analyzing temperature dependence of EL under forward and reverse-biases.