Title :
Reduction of size fluctuation effect in GaInAs/GaInAsP quantum-box lasers using tensile-strained active region
Author :
Hirayama, Hideki ; Asada, Masahiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
The authors show theoretically the reduction of the quantum-box (QB) size fluctuation effect in GaInAs/GaInAsP QB lasers using a tensile-strained active region. The tensile-strained QB laser is shown to be highly advantageous for a 1.5 μm low threshold laser
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; semiconductor quantum dots; size effect; 1.5 mum; GaInAs/GaInAsP; GaInP-GaInAsP; low threshold laser; quantum-box lasers; size fluctuation effect; tensile-strained active region; Capacitive sensors; Charge carrier processes; Fluctuations; Indium phosphide; Optical coupling; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519148
