Title :
Describing third-order nonlinear optical properties of nanocrystalline porous silicon using Bruggeman model
Author :
Bazaru, T. ; Vlad, V.I. ; Petris, A. ; Gheorghe, P.S. ; Fazio, E.
Author_Institution :
Nat. Inst. for Lasers, Plasma & Radiat. Phys., Bucharest, Romania
Abstract :
In this paper, a comparison between third order effective nonlinear optical susceptibility of nanoporous Si (nPS), predicted by Bruggeman model, and experimental value of chinPS obtained with the reflection Z-Scan technique is presented. Our nPS samples were realized by electrochemical etching of bulk silicon in hydrofluoric acid (HF). The Si fill fraction and the thickness of the layer can be controlled by the current density, the duration of etching and the concentration of HF. In our case, the fill fraction of nPS sample is fSi ~ 0.2 and the band gap is ~ 2 eV
Keywords :
current density; elemental semiconductors; etching; nanoporous materials; nonlinear optical susceptibility; porous semiconductors; silicon; Bruggeman model; Si; bulk silicon; current density; electrochemical etching; hydrofluoric acid; nanocrystalline porous silicon; reflection Z-Scan technique; silicon fill fraction; third-order nonlinear optical susceptibility; Current density; Etching; Hafnium; Nanoporous materials; Nonlinear optics; Optical reflection; Photonic band gap; Predictive models; Silicon; Thickness control;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5191491
