Describing third-order nonlinear optical properties of nanocrystalline porous silicon using Bruggeman model

Author

Bazaru, T. ; Vlad, V.I. ; Petris, A. ; Gheorghe, P.S. ; Fazio, E.

Author_Institution

Nat. Inst. for Lasers, Plasma & Radiat. Phys., Bucharest, Romania

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this paper, a comparison between third order effective nonlinear optical susceptibility of nanoporous Si (nPS), predicted by Bruggeman model, and experimental value of chi_nPS obtained with the reflection Z-Scan technique is presented. Our nPS samples were realized by electrochemical etching of bulk silicon in hydrofluoric acid (HF). The Si fill fraction and the thickness of the layer can be controlled by the current density, the duration of etching and the concentration of HF. In our case, the fill fraction of nPS sample is f_Si ~ 0.2 and the band gap is ~ 2 eV

Keywords

current density; elemental semiconductors; etching; nanoporous materials; nonlinear optical susceptibility; porous semiconductors; silicon; Bruggeman model; Si; bulk silicon; current density; electrochemical etching; hydrofluoric acid; nanocrystalline porous silicon; reflection Z-Scan technique; silicon fill fraction; third-order nonlinear optical susceptibility; Current density; Etching; Hafnium; Nanoporous materials; Nonlinear optics; Optical reflection; Photonic band gap; Predictive models; Silicon; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5191491

Filename

5191491